Ga/sub( 1-x)/Al/sub x/As/Ga/sub( 1-y)/Al/sub y/As double-heterostructure room-temperature lasers grown by metalorganic chemical vapor deposition

Journal Article · Wed Dec 14 23:00:00 EST 1977 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89569· OSTI ID:7282749

Dupuis, R D; Dapkus, P D

Room-temperature operation of Ga/sub( 1-x)/Al/sub x/As/Ga/sub( 1-y)/Al/sub y/As double-heterostructure lasers grown by metalorganic chemical vapor deposition (MO-CVD) has been achieved. These devices have Ga/sub( 1-y)/Al/sub y/As active layers of 0.89 or approx. =y9 or approx. =0.12 and emit in the wavelength range 8000

• Research Organization: Rockwell International, Electronic Device Division, Electronic Research Center, Anaheim, California 92803
• OSTI ID: 7282749
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 31:12; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ENERGY
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LAYERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD ENERGY