Room-temperature operation of Ga/sub (1-x)Al/sub x/As/GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition

Journal Article · Sat Oct 01 00:00:00 EDT 1977 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89743· OSTI ID:7220845

Dupuis, R D; Dapkus, P D

Room-temperature pulsed laser operation of /Ga/sub(1-x)/Al/sub x/As/GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition (MO-CVD) has been achieved. Threshold current densities as low as 1.2 kA/cm/sup 2/ have been attained in totally internally reflecting devices. In broad-area Fabry-Perot diodes, threshold current densities as low as 3 kA/cm/sup 2/ have been attained. These lasers are fabricated from five-layer epitaxial structures grown entirely by the MO-CVD process.

• Research Organization: Rockwell International, Electronic Device Division, Electronic Research Center, Anaheim, California 92803
• OSTI ID: 7220845
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 31:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELECTROLUMINESCENCE
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LUMINESCENCE
OPERATION
PERFORMANCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING