High-efficiency GaAlAs/GaAs heterostructure solar cells grown by metalorganic chemical vapor deposition

Journal Article · Mon Aug 01 00:00:00 EDT 1977 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89647· OSTI ID:7108754

Dupuis, R D; Dapkus, P D; Yingling, R D; Moudy, L A

High-efficiency GaAlAs/GaAs heterostructure solar cells have been grown by metalorganic chemical vapor deposition (MO-CVD). Simulated air-mass-zero (AM0) short-circuit current densities of 24.5 mA/cm/sup 2/, open-circuit voltages of 0.99 V, fill factors of 0.74, and efficiencies of 12.8% have been measured on devices without AR coatings (uncorrected for contact area). These cell structures employ a thin (approx.520A) GaAlAs : Zn window and a GaAs : Zn/GaAs : Se p-n junction grown entirely by the MO-CVD process.

• Research Organization: Electronics Research Center, Rockwell International, Anaheim, California 92803
• OSTI ID: 7108754
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 31:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
EPITAXY
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTION DIODES
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SOLAR CELLS
SURFACE COATING