Be-implanted GaAs/GaAlAs double heterostructure stripe geometry lasers grown by metalorganic chemical vapor deposition

Journal Article · Sat Sep 01 00:00:00 EDT 1984 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.334135· OSTI ID:6875934

Shtrikman, H; Fekete, D

Be-implanted double heterostructure stripe geometry GaAs lasers grown by metalorganic chemical vapor deposition are described. Near-field and far-field patterns of the lasers are given. A regrowth process was used in order to introduce the highly conductive GaAs cap layer over the implanted structure.

• Research Organization: Microelectronics Research Center, Technion-Israel Institute of Technology, Haifa 32000, Israel
• OSTI ID: 6875934
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 56:5; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
BERYLLIUM IONS
CHARGED PARTICLES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENTS
DEPOSITION
DESIGN
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION IMPLANTATION
IONS
LASER RADIATION
LASERS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PNICTIDES
PUMPING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD CURRENT