Buried GaAs/GaAlAs laser with p-dopant implanted stripe as a mask for liquid-phase epitaxy regrowth

Journal Article · Sat Aug 15 00:00:00 EDT 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.339622· OSTI ID:6507863

Menigaux, L; Sansonetti, P; Brandon, J; Henoc, P

Buried GaAs/GaAlAs double heterostructure lasers have been realized by combining a double heterostructure grown by metalorganic chemical vapor deposition, p-dopant implantation, stripes chemical etching, and liquid-phase epitaxy (LPE) regrowth of n/sup -/ GaAlAs. Although the p-implanted top of the stripes were thermally annealed during the LPE burying, no regrowth occurred on them. Buried lasers were thus directly obtained while p-ohmic contact properties were good. The causes of such a phenomenon have been studied by transmission electron microscope and electron diffraction techniques. Typical threshold currents of 12 mA for a 270-..mu..m cavity length were obtained. This technology offers the potential of low ohmic contact resistivity.

• Research Organization: Centre National d'Etudes des Telecommunications, Laboratoire de Bagneux, 196 avenue Henri Ravera, 92220 Bagneux, France
• OSTI ID: 6507863
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 62:4; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COHERENT SCATTERING
CURRENTS
DATA
DEPOSITION
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELECTRON DIFFRACTION
EPITAXY
ETCHING
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
HETEROJUNCTIONS
INFORMATION
ION IMPLANTATION
JUNCTIONS
LASERS
LIQUID PHASE EPITAXY
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE COATING
SURFACE FINISHING
THRESHOLD CURRENT