Oxygen-implanted double-heterojunction GaAs/GaAlAs injection lasers

Journal Article · Tue Jul 01 04:00:00 EDT 1975 · IEEE J. Quant. Electron., v. QE-11, no. 7, pp. 413-418

DOI:https://doi.org/10.1109/JQE.1975.1068675· OSTI ID:4161211

Blum, J M; McGroddy, J C; McMullin, P G; Shih, K K; Smith, A W; Ziegler, J F

A new process for stripe formation in double-heterostructure GaAs/GaAlAs injection lasers is described. This process, which uses oxygen-ion implantation to form the stripe through a chemical doping effect, has several advantages over alternative methods, both with respect to device processing and device properties and has produced high yields of cw room-temperature lasers. Details of the device structure and fabrication processes are presented. The results of annealing studies, optical measurements, and lifetesting are described. (auth)

• Research Organization: IBM Thomas J. Watson Research Center, Yorktown Heights, NY
• Sponsoring Organization: USDOE
• NSA Number: NSA-33-007204
• OSTI ID: 4161211
• Journal Information: IEEE J. Quant. Electron., v. QE-11, no. 7, pp. 413-418, Journal Name: IEEE J. Quant. Electron., v. QE-11, no. 7, pp. 413-418; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

*SEMICONDUCTOR LASERS-- FABRICATION
420300* --Engineering--Lasers
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
GALLIUM ARSENIDES
ION IMPLANTATION
N42210* --Engineering--Facilities & Equipment--Lasers
OXYGEN ADDITIONS
PERFORMANCE