Strain-enhanced luminescence degradation in GaAs/GaAlAs double-heterostructure lasers revealed by photoluminescence
Journal Article
·
· J. Appl. Phys.; (United States)
Photoluminescence degradation observed in room-temperature-lifetested GaAs/GaAlAs DH stripe lasers has been correlated with the strain field induced in the devices by the stripe-defining oxide. A degradation mechanism based on strain- and nonradiative-recombination-enhanced point-defect migration is proposed.
- Research Organization:
- British Post Office Research Centre, Martlesham Heath, Ipswich, IP5 7RE, United Kingdom
- OSTI ID:
- 5921553
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 50:12; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL REACTIONS
CORRELATIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DECOMPOSITION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LIFETIME
LUMINESCENCE
MATHEMATICAL MODELS
MEDIUM TEMPERATURE
OXIDES
OXYGEN COMPOUNDS
PHOTOCHEMICAL REACTIONS
PHOTOLUMINESCENCE
PHOTOLYSIS
PNICTIDES
POINT DEFECTS
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STRAINS
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL REACTIONS
CORRELATIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DECOMPOSITION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LIFETIME
LUMINESCENCE
MATHEMATICAL MODELS
MEDIUM TEMPERATURE
OXIDES
OXYGEN COMPOUNDS
PHOTOCHEMICAL REACTIONS
PHOTOLUMINESCENCE
PHOTOLYSIS
PNICTIDES
POINT DEFECTS
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STRAINS