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Strain-enhanced luminescence degradation in GaAs/GaAlAs double-heterostructure lasers revealed by photoluminescence

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.325965· OSTI ID:5921553
Photoluminescence degradation observed in room-temperature-lifetested GaAs/GaAlAs DH stripe lasers has been correlated with the strain field induced in the devices by the stripe-defining oxide. A degradation mechanism based on strain- and nonradiative-recombination-enhanced point-defect migration is proposed.
Research Organization:
British Post Office Research Centre, Martlesham Heath, Ipswich, IP5 7RE, United Kingdom
OSTI ID:
5921553
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 50:12; ISSN JAPIA
Country of Publication:
United States
Language:
English