Observation and analysis of very rapid optical degradation of GaAs/GaAlAs DH laser material

Journal Article · Mon Nov 01 04:00:00 EST 1976 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89159· OSTI ID:7353224

Monemar, B; Woolhouse, G R

We have observed and analyzed a very rapid form of degradation caused by the optical excitation of GaAs/GaAlAs DH laser material. It consists of the very rapid (50 ..mu../sec) development of <110>-oriented lines originating at a mechanically damaged area and restricted to the optically excited area. TEM analysis shows that the degraded region consists of an orthogonal array of misfit dislocations of 60degree type at the interface between the p-ternary layer and the active region. It seems likely that the dislocations are generated by glide as a result of the lattice misfit stress between GaAs and GaAlAs and that their energy of motion is supplied through nonradiative recombination events. (AIP)

• Research Organization: IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
• OSTI ID: 7353224
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 29:9; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ENERGY-LEVEL TRANSITIONS
EXCITATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERFACES
JUNCTION DIODES
LASERS
LINE DEFECTS
PERFORMANCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
STACKING FAULTS
STRESSES