Catastrophic degradation of GaAlAs DH laser diodes

Journal Article · Fri Dec 15 04:00:00 EST 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90251· OSTI ID:6883257

Imai, H; Morimoto, M; Sudo, H; Fujiwara, T; Takusagawa, M

The catastrophic degradation of GaAlAs DH laser diodes is examined with the application of pulsed or dc current. The dependence of the pulsewidth on the degradation is measured using samples with or without facet coating. The light output P/sub D/ at which the catastrophic degradation occurs decreases with an increase in the pulsewidth in the pulsewidth range 100 nsec to 10--50 ..mu..sec, and P/sub D/ is constant over the pulsewidth of 10--50 ..mu..sec. The sample with an Al/sub 2/O/sub 3/ film coating has the highest P/sub D/. Photoluminescence patterns of the active layer in degraded samples both with and without facet coating show the growth of DLD's in the <110> direction from the vicinity of a facet in the stripe region.

• Research Organization: Fujitsu Labs. Ltd., 1015 Kamikodanaka, Nakahara-ku Kawasaki, 211, Japan
• OSTI ID: 6883257
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:12; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
COATINGS
JUNCTION DIODES
LASERS
LUMINESCENCE
PERFORMANCE
PHOTOLUMINESCENCE
PULSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS