Catastrophic degradation of GaAlAs DH laser diodes
The catastrophic degradation of GaAlAs DH laser diodes is examined with the application of pulsed or dc current. The dependence of the pulsewidth on the degradation is measured using samples with or without facet coating. The light output P/sub D/ at which the catastrophic degradation occurs decreases with an increase in the pulsewidth in the pulsewidth range 100 nsec to 10--50 ..mu..sec, and P/sub D/ is constant over the pulsewidth of 10--50 ..mu..sec. The sample with an Al/sub 2/O/sub 3/ film coating has the highest P/sub D/. Photoluminescence patterns of the active layer in degraded samples both with and without facet coating show the growth of DLD's in the <110> direction from the vicinity of a facet in the stripe region.
- Research Organization:
- Fujitsu Labs. Ltd., 1015 Kamikodanaka, Nakahara-ku Kawasaki, 211, Japan
- OSTI ID:
- 6883257
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 33:12
- Country of Publication:
- United States
- Language:
- English
Similar Records
Observation and analysis of very rapid optical degradation of GaAs/GaAlAs DH laser material
Mechanism of catastrophic degradation in 1. 3-. mu. m V-grooved substrate buried-heterostructure lasers with the application of large pulsed currents