Evaluation of defects and degradation in GaAs-GaAlAs wafers using transmission cathodoluminescence
Journal Article
·
· J. Appl. Phys.; (United States)
A large number of GaAs substrates GaAlAs double-heterostructure (DH) wafers, and high-radiance GaAlAs DH light-emitting diodes (LEDS) were evaluated using transmission cathodoluminescence (TCL). We show that only epitaxial wafers with a high defect density as revealed by TCL readily develop dark line defects (DLDs) with current injection, optical excitation, or electron beam excitation. Furthermore, in agreement with the previous work, the electron-beam-induced DLDs originate at dislocations and their growth requires minority-carrier injection. Based on these results, it is inferred that TCL can serve as a nondestructive screening technique for the selection of materials that produces a high yield of reliable LEDs.
- Research Organization:
- Bell Laboratories, Murray Hill, New Jersey 07904
- OSTI ID:
- 5644978
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:2; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
320302* -- Energy Conservation
Consumption
& Utilization-- Industrial & Agricultural Processes-- Materials
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CATHODOLUMINESCENCE
CHARGE CARRIERS
COMPARATIVE EVALUATIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
ELECTRON BEAMS
ENERGY-LEVEL TRANSITIONS
EPITAXY
EXCITATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LEPTON BEAMS
LIGHT EMITTING DIODES
LUMINESCENCE
PARTICLE BEAMS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SUBSTRATES
THERMAL DEGRADATION
320302* -- Energy Conservation
Consumption
& Utilization-- Industrial & Agricultural Processes-- Materials
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CATHODOLUMINESCENCE
CHARGE CARRIERS
COMPARATIVE EVALUATIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
ELECTRON BEAMS
ENERGY-LEVEL TRANSITIONS
EPITAXY
EXCITATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LEPTON BEAMS
LIGHT EMITTING DIODES
LUMINESCENCE
PARTICLE BEAMS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SUBSTRATES
THERMAL DEGRADATION