Dark-line defects induced by mechanical bending in GaAs-Ga/sub x/Al/sub x/As double-heterostructure wafers

Journal Article · Fri Oct 15 04:00:00 EDT 1976 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89132· OSTI ID:7267209

Kishino, S; Nakashima, H; Ito, R

A <110>-oriented dark-line defect (DLD) has been induced by mechanical bending in GaAs/sub x/Al/sub x/As double-heterostructure (DH) wafers. Both the concave upward and the convex upward bending (with the DH epitaxial layer as the upward surface) of the DH wafer has been carried out using a four-point bending technique. The DLD formation has shown both the stress-direction dependence and the asymmetry of the DH wafer. Photoluminescence topography has shown that the characteristics of the DLD's are exactly the same as those of the optically induced DLD's. From experimental results, it is conjectured that a glide-multiplication mechanism is probably acceptable for the production of the <110> DLD dislocations. (AIP)

• Research Organization: Central Research Laboratories, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
• OSTI ID: 7267209
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 29:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BENDING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
EFFICIENCY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTION DIODES
LASERS
LINE DEFECTS
OPERATION
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
STRESSES