Growth and propagation mechanism of <110>-oriented dark-line defects in GaAs-Ga/sub 1 - x/Al/sub x/As double heterostructure crystals

Journal Article · Fri Jul 01 04:00:00 EDT 1977 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.324129· OSTI ID:7215555

Nakashima, H; Kishino, S; Ito, R

Application of external stress on a double heterostructure (DH) crystal is used to induce <110>-oriented dark-line defects (DLD). The stress is applied by using a four-point mechanical bending apparatus. Resulting DLD formation is found to depend on stress direction and DH crystal orientation. This asymmetric DLD introduction can be explained by the difference in glide motion between ..cap alpha.. and ..beta.. dislocations. It is shown that a threshold stress exists for the DLD formation. This threshold stress and the growth velocity of the DLD's strongly depend on optical pump intensity. Extension of the DLD's into the ternary passive layers is observed by x-ray topography and phase-contrast microscopy. This observation suggests that stresses caused by local heating at the site of a defect play an important role in inducing <110> DLD's. These experimental results lead to the conclusion that dislocation glide processes are responsible for <110>-DLD propagation.

• Research Organization: Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
• OSTI ID: 7215555
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 48:7; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTION DIODES
LASERS
LINE DEFECTS
LUMINESCENCE
MICROSCOPY
OPTICAL MICROSCOPY
OPTICAL PUMPING
PERFORMANCE
PHOTOLUMINESCENCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SPECTROSCOPY
X-RAY SPECTROSCOPY