Nature of <110> dark-line defects in degraded (GaAl)As-GaAs double-heterostructure lasers

Journal Article · Thu Sep 15 04:00:00 EDT 1977 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89705· OSTI ID:7305215

Ishida, K; Kamejima, T; Matsui, J

The <100> dark-line defects (DLD's) in the degraded (GaAl)As-GaAs double-heterostructure lasers are studied by transmission electron microscopy. Two types of <110> DLD's are observed; one is associated with <110> straight dislocations and the other with dislocation networks developing from the mirror surface. The former type of the <110> DLD's is found to be formed by dislocation glide motion. The development of the <100> dislocation dipole from the <110> dislocation is also observed, indicating that the <110> dislocation is a source of the <100> dislocation dipole.

• Research Organization: Nippon Electric Co., Ltd., Central Research Laboratories, Takatsuku, Kawasaki, Japan
• OSTI ID: 7305215
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 31:6; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRON MICROSCOPY
JUNCTION DIODES
LASERS
LINE DEFECTS
MICROSCOPY
PERFORMANCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
STRESSES
TEMPERATURE GRADIENTS