Study of defects in a rapidly degraded InGaAsP/InGaP double-heterostructure laser grown by liquid phase epitaxy

Journal Article · Tue May 01 00:00:00 EDT 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94958· OSTI ID:6613053

Ueda, O; Wakao, K; Yamaguchi, A; Komiya, S; Isozumi, S; Nishi, H; Umebu, I

A rapidly degraded InGaAsP/InGaP double-heterostructure laser (lambda = 810 nm) grown on a (001) oriented GaAs substrate during cw operation at room temperature, is investigated by photoluminescence topography and transmission electron microscopy. Several <100> dark-line defects and <110> dark-line defects parallel to the stripe are observed in the photoluminescence image of the active region. The <100> dark-line defects are associated with classic interstitial type dislocation dipoles with Burgers vectors of the type a/2(101) 45/sup 0/ inclined to the junction plane. The <110> dark-line defect corresponds to a half-dislocation loop (b-bar = a/2<011>) with many jogs (due to climb motion). In InGaAsP/InGaP material on GaAs, it is suggested that recombination enhanced defect motion (climb motion) can occur.

• Research Organization: Fujitsu Laboratories, Ltd., 1677 Dannoki, Ono, Atsugi 243-01, Japan
• OSTI ID: 6613053
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:9; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFRARED RADIATION
INTERSTITIALS
LASERS
LINE DEFECTS
LIQUID PHASE EPITAXY
LUMINESCENCE
METALS
MICROSCOPY
NEAR INFRARED RADIATION
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
POINT DEFECTS
RADIATIONS
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TOPOGRAPHY
TRANSMISSION ELECTRON MICROSCOPY