Improvement of GaAs-GaAlAs double-heterostructure laser wafer by Ga/sub 1-x/Al/sub x/As buffer layer

Journal Article · Mon Sep 15 04:00:00 EDT 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91990· OSTI ID:5199093

Shima, K; Morimoto, M; Imai, H; Fujiwara, T; Takusagawa, M

The optically induced degradation in GaAs-GaAlAs double-heterostructure (DH) laser wafers is examined at elevated temperatures. The degradation of the photoluminescence properties by optical pumping is considered to originate at the interface between an n-GaAlAs clad layer and a p-GaAs active layer, as it is greatly reduced by the insertion of a thin Ga/sub 1-x/Al/sub x/As buffer layer (xapprox.0.05, approx.0.05 ..mu..m thick) between these two layers. The degradation rate during optical pumping is correlated to laser life. The lasers fabricated from the DH wafers with the Ga/sub 1-x/Al/sub x/As buffer layer are still operating after 2000 h at 70 /sup 0/C, whereas lasers without the buffer layer are inoperative after a few hundred hours.

• Research Organization: Fujitsu Labs., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
• OSTI ID: 5199093
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 37:6; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BUFFERS
CHEMICAL RADIATION EFFECTS
CHEMICAL REACTIONS
CHEMISTRY
DECOMPOSITION
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERFACES
LASERS
LAYERS
LUMINESCENCE
MATERIALS
N-TYPE CONDUCTORS
OPTICAL PUMPING
P-TYPE CONDUCTORS
PHOTOLUMINESCENCE
PNICTIDES
RADIATION CHEMISTRY
RADIATION EFFECTS
RADIOLYSIS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS