Thermal strain-induced degradation mechanism in the visible AlGaAs/GaAs laser

Journal Article · Tue Oct 01 04:00:00 EDT 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.335919· OSTI ID:5318967

Ikeda, M; Ueda, O; Komiya, S; Umebu, I

We fabricated and life-tested visible AlGaAs/GaAs channeled-substrate-planar-type lasers and found that some are degraded within 100 h of operation. We investigated these using photoluminescence and transmission electron microscopic images. The characteristic features in photoluminescence images are dark defects that run parallel to the channeled stripe. Using transmission electron microscopy, we found that these dark defects are composed of precipitates, dislocation loops, and dislocation dipoles. In order to know the relation between these degradation phenomena and the thermal strain induced by lattice mismatch, we calculated the stress distribution in the semiconductor laser using the finite element method. According to this simulation, a stress concentration in the active layer arises near the edges of the channeled stripe where the volume dilatation is maximal. Combining the results of experiments and simulation, we concluded that interstitial atoms created by nonradiative recombination migrate to the edges of the stripe, and that ultimately dark defects appear near the edges of the stripe.

• Research Organization: Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243, Japan
• OSTI ID: 5318967
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:7; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COMPUTERIZED SIMULATION
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERSTITIALS
LASERS
LIFETIME
LINE DEFECTS
MIGRATION
OPERATION
PNICTIDES
POINT DEFECTS
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SIMULATION
STRAINS
STRESSES