Temperature dependence of degradation mechanisms in long-lived (GaAl)As DH lasers

Journal Article · Thu Jun 01 04:00:00 EDT 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325305· OSTI ID:6847123

Ritchie, S; Godfrey, R F; Wakefield, B; Newman, D H

An investigation into the effects of temperature on degradation mechanisms in GaAs/GaAlAs DH lasers has been carried out. A mechanism (or mechanisms) independent of stimulated light levels is found to be relatively insensitive to temperature. This suggests that a residual failure mechanism may be associated with defect motion being enhanced by nonradiative recombination. A statistical analysis of the lifetest results and photoluminescence studies of lifetested devices suggest that there may be different mechanisms in operation at different temperatures. Thus, great care must be exercised before using conventional extrapolation techniques to predict laser lives at room temperature.

• Research Organization: British Post Office Research Department, Martlesham Heath, Ipswich, IP5 7RE, United Kingdom
• OSTI ID: 6847123
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:6; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTION DIODES
LASERS
LUMINESCENCE
PERFORMANCE
PHOTOLUMINESCENCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE