Embedded stripe Be-implanted GaAs/GaAlAs double heterostructure laser grown by metalorganic chemical vapor deposition

Journal Article · Thu Nov 01 04:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95463· OSTI ID:6228244

Fekete, D

A planar GaAs/GaAlAs double heterostructure stripe geometry laser with laterally effective step change of the refraction index is described. The planar structure is achieved by regrowing an embedded stripe selectively on a Be-implanted stripe, using metalorganic chemical vapor deposition. The near-field and the far-field patterns confirm the index guiding mechanism of the light. The threshold current is comparable to those of similar lasers grown by uninterrupted growth process either by liquid phase epitaxy or by metalorganic chemical vapor deposition.

• Research Organization: Department of Physics and Solid State Institute, Technion--Israel Institute of Technology, Haifa 32 000, Israel
• OSTI ID: 6228244
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 45:9; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALKALINE EARTH METALS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BERYLLIUM
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENTS
DATA
DEPOSITION
ELECTRIC CURRENTS
ELEMENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
METALS
NUMERICAL DATA
OPTICAL PROPERTIES
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD CURRENT