High-efficiency, low-threshold, Zn-diffused narrow stripe GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition

Journal Article · Mon Feb 01 04:00:00 EST 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93042· OSTI ID:5825655

Hong, C S; Coleman, J J; Dapkus, P D; Liu, Y Z

Deep Zn-diffused, 4-..mu..m stripe thin p active layer GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition are reported. Threshold currents as low as 40 mA (length 220 ..mu..m), a characteristic temperature as large as 170 /sup 0/C, and external differential quantum efficiencies as high as 80--90% are obtained. Single longitudinal and transverse mode operation of these lasers is also observed.

• Research Organization: Rockwell International, Microelectronics Research and Development Center, P. O. Box 1085, Thousand Oaks, California 91360
• OSTI ID: 5825655
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CONFIGURATION
CRYSTAL GROWTH
DATA
DEPOSITION
DIFFUSION
EFFICIENCY
ELEMENTS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
LAYERS
MATERIALS
METALS
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
OSCILLATION MODES
P-TYPE CONDUCTORS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SURFACE COATING
ZINC