Uniformity of an embedded stripe large optical-cavity GaAs/GaAlAs double-heterostructure laser grown by metallo-organic chemical vapor deposition

Journal Article · Fri Feb 14 23:00:00 EST 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.336536· OSTI ID:6442947

Fekete, D

Large optical-cavity GaAs/GaAlAs double-heterostructure stripe geometry laser with laterally effective step change of the refractive index is described. The stabilization of the transverse mode is achieved by regrowing an embedded stripe selectively on a large optical cavity, using metallo-organic chemical vapor deposition. The near-field and the far-field patterns confirm the index guiding mechanism of the light. No kinks were observed in the light versus current characteristics up to light power of 200 mW/facet. The threshold current uniformity is comparable to those of gain-guided lasers grown by metallo-organic chemical vapor deposition.

• Research Organization: Department of Physics and Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000, Israel
• OSTI ID: 6442947
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 59:4; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENTS
DEPOSITION
DESIGN
ELECTRIC CURRENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASER CAVITIES
LASERS
OPTICAL MODES
OPTICAL PROPERTIES
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
OSCILLATION MODES
PHYSICAL PROPERTIES
PNICTIDES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STABILIZATION
SURFACE COATING
THRESHOLD CURRENT