Very low threshold Ga/sub() 1-x/Al/sub x/As-GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition

Journal Article · Fri Apr 14 23:00:00 EST 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90090· OSTI ID:5091889

Dupuis, R D; Dapkus, P D

Room-temperature Ga/sub() 1-x/Al/sub x/As-GaAs DH lasers with very low threshold current densities have been grown by metalorganic chemical vapor deposition (MO-CVD). Devices have been fabricated with thresholds lower than the best values reported for comparable devices grown by liquid-phase epitaxy. The lowest threshold achieved is 590 A/cm/sup 2/ for a laser with an active layer thickness of d=1100 A and Ga/sub() 1-x/Al/sub x/As confinement layers with xapprox.0.50

• Research Organization: Rockwell International, Electronic Devices Division, Electronic Research Center, Anaheim, California 92803
• OSTI ID: 5091889
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 32:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DEPOSITION
ENERGY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD ENERGY