Laser oscillation with optically pumped very thin GaAs-Al/sub x/Ga/sub x/As multilayer structures and conventional double heterostructures

Journal Article · Fri Oct 01 04:00:00 EDT 1976 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.322422· OSTI ID:7156483

Miller, R C; Dingle, R; Gossard, A C; Logan, R A; Nordland, Jr, W A; Wiegmann, W

Optically pumped laser oscillation from multilayer heterostructures (ML) grown by molecular beam epitaxy (MBE) that consist of many alternating thin layers of GaAs and Al/sub x/Ga/sub x/As has been studied in some detail over the temperature range 7--300 K. These samples which have GaAs layers 100--200 A thick that act as one-dimensional potential wells for electrons and holes have thresholds for lasing that are generally a factor of 2 or more higher than conventional comparable GaAs-Al/sub x/Ga/sub x/As double heterostructures (DH) also grown by MBE. The quantum effects due to the GaAs wells of the ML samples are shown to exist under lasing conditions well above room temperature, but there is no evidence to date of the beneficial effects expected from the modified density of states of this type of structure. Also optically pumped conventional DH lasers grown by MBE and liquid phase epitaxy (LPE) have been compared. The DH lasers grown by MBE are found to have lasing thresholds that are consistently about a factor of 2 higher than their twins grown by LPE. (AIP)

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 7156483
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 47:10; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ENERGY
ENERGY LEVELS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTION DIODES
LASERS
LAYERS
OPTICAL PUMPING
OSCILLATIONS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
THRESHOLD ENERGY