Heterostructure semiconductor lasers prepared by molecular beam epitaxy

Journal Article · Mon Oct 01 00:00:00 EDT 1984 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1984.1072279· OSTI ID:6032223

Tsang, W T

--0.72-0.88 ..mu..m (AlGa)As, 1.3-1.65 ..mu..m GalnAsP and AlGaInAs, and 1.78 ..mu..m AlGaSb double-heterostructure (DH) lasers were prepared by molecular beam epitaxy. For AlGaAs DH lasers very low 300 K threshold current densities and long operating life (mean time to failure >10 h at 300 K) were achieved and optical transmitters containing MBE-grown lasers have been field-tested. For lasers with lasing wavelength >1 ..mu..m, MBE is in the development stage. The unique capabilities of MBE as an epitaxial growth technique and its important contributions to the field of optoelectronics are illustrated by a discussion of a new class of laser structures including quantum well heterostructure of GaAs/ Al Ga /SUB 1-x/ As and Ga /SUB 0.47/ In /SUB 0.53/ As/InP, double-barrier double-heterostructure lasers. These new lasers, made possible by MBE, have characteristics unmatched by conventional liquid phase epitaxial growth techniques.

• Research Organization: AT and T Bell Laboratories, Murray Hill, NJ 07974
• OSTI ID: 6032223
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-20:10; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EPITAXY
FIELD TESTS
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
MOLECULAR BEAM EPITAXY
PERFORMANCE TESTING
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
TESTING