Application of molecular-beam epitaxial layers to heterostructure lasers

Journal Article · Tue Jul 01 00:00:00 EDT 1975 · IEEE Journal of Quantum Electronics

DOI:https://doi.org/10.1109/JQE.1975.1068642· OSTI ID:4154193

Casey, H.; Cho, A.; Barnes, P.

GaAs-Al_xGa_1-xAs double-heterostructure (DH) lasers with Si-doped n-type active layers have been prepared by molecular-beam epitaxy (MBE) and the laser properties evaluated. With 0.2-$mu$m-thick active layers and 300-$mu$m cavity lengths, typical room-temperature threshold current densities J_th of 5.0 x 10³ A/cm² and best values of 2.5 x 10³ A/cm² have been obtained. Stripe-geometry devices were run cw up to 9⁰C. Photoluminescence (PL) studies of single layers grown with the donors Si, Ge, and Sn show that the luminescent intensity for MBE n-type layers depends on the substrate temperature during growth. The PL intensity for Sn-doped MBE layers was greater than for high-quality Sn-doped liquid-phase-epitaxial layers. (auth)

• Research Organization: Bell Telephone Labs., Murray Hill, NJ
• Sponsoring Organization: USDOE
• NSA Number: NSA-33-007215
• OSTI ID: 4154193
• Journal Information: IEEE Journal of Quantum Electronics, Journal Name: IEEE Journal of Quantum Electronics Journal Issue: 7 Vol. 11; ISSN 0018-9197
• Country of Publication: United States
• Language: English

Related Subjects

*SEMICONDUCTOR LASERS-- FABRICATION
420300* --Engineering--Lasers
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
GALLIUM ARSENIDES
N42210* --Engineering--Facilities & Equipment--Lasers
PERFORMANCE