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Optical self-pulsation behavior of cw (AlGa)As shallow proton-bombarded and narrow-striped (5. mu. m) double-heterostructure lasers grown by molecular beam epitaxy

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.92554· OSTI ID:6371414

A statistical study of the self-induced pulsation behavior of cw (AlGa)As double-heterostructure (DH) (having Al/sub 0.08/Ga/sub 0.92/ As active layers) proton-bombarded stripe lasers grown by molecular beam epitaxy (MBE) during accelerated aging at elevated (55 or 70 /sup 0/C) temperatures is made and compared with that of similar lasers grown by liquid-phase epitaxy (LPE). For the 5-..mu..m-stripe, shallow proton-bombarded (proton damage does not reach the active layer) stripe lasers, those fabricated from an MBE DH wafer studied show a significantly higher oscillation frequency (F/sub osc/) of the self-pulsation than those fabricated from LPE DH wafers. It is also shown that by going from 10-..mu..m-stripe and deep proton-bombarded (proton damage penetrates the active layer) to 5-..mu..m-stripe and shallow proton-bombarded stripe lasers, the F/sub osc/ are significantly higher even after an initial burn-in at elevated temperatures (55 or 70 /sup 0/C) for 100 h.

Research Organization:
Bell Laboratories, Murray Hill, New Jersey 07974
OSTI ID:
6371414
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 39:1; ISSN APPLA
Country of Publication:
United States
Language:
English