Optical self-pulsation behavior of cw (AlGa)As shallow proton-bombarded and narrow-striped (5. mu. m) double-heterostructure lasers grown by molecular beam epitaxy

Journal Article · Wed Jul 01 04:00:00 EDT 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92554· OSTI ID:6371414

Tsang, W T; Holbrook, W R; Fraley, P E

A statistical study of the self-induced pulsation behavior of cw (AlGa)As double-heterostructure (DH) (having Al/sub 0.08/Ga/sub 0.92/ As active layers) proton-bombarded stripe lasers grown by molecular beam epitaxy (MBE) during accelerated aging at elevated (55 or 70 /sup 0/C) temperatures is made and compared with that of similar lasers grown by liquid-phase epitaxy (LPE). For the 5-..mu..m-stripe, shallow proton-bombarded (proton damage does not reach the active layer) stripe lasers, those fabricated from an MBE DH wafer studied show a significantly higher oscillation frequency (F/sub osc/) of the self-pulsation than those fabricated from LPE DH wafers. It is also shown that by going from 10-..mu..m-stripe and deep proton-bombarded (proton damage penetrates the active layer) to 5-..mu..m-stripe and shallow proton-bombarded stripe lasers, the F/sub osc/ are significantly higher even after an initial burn-in at elevated temperatures (55 or 70 /sup 0/C) for 100 h.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6371414
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 39:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AGING
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
BEAMS
COMPARATIVE EVALUATIONS
CRYSTAL GROWTH
DATA
ELEMENTARY PARTICLES
EPITAXY
FABRICATION
FERMIONS
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRONS
INFORMATION
IRRADIATION
LASERS
LIQUIDS
MEDIUM TEMPERATURE
MOLECULAR BEAMS
NUCLEONS
OSCILLATIONS
PNICTIDES
PROTONS
PULSATIONS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS