cw electro-optical characteristics and preliminary reliability of double-heterostructure GaAs-Al/sub x/Ga/sub 1-x/As lasers grown by molecular beam epitaxy

Journal Article · Tue Jul 15 00:00:00 EDT 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91800· OSTI ID:5294846

Tsang, W T; Hartman, R L; Elder, H E; Holbrook, W R

The cw threshold currents and total forward series resistances of the proton-bombarded stripe-geometry lasers fabricated from GaAs-Al/sub 0.3/Ga/sub 0.7/As double-heterostructure (DH) wafers grown by molecular beam epitaxy (MBE) are at least as low as those similar-geometry lasers grown by liquid phase epitaxy. Yields for such laser diodes of > or approx. =90% were obtained. Randomly picked diodes fabricated from an early MBE DH wafer having a 0.4-..mu..m GaAs active layer have operated continuously at a constant output power of approx.2 mW/mirror in a approx.38 /sup 0/C dry-nitrogen ambient for more than 13 000 h and are still operating.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 5294846
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 37:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
BEAMS
COMPARATIVE EVALUATIONS
CRYSTAL GROWTH
DATA
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
EPITAXY
FABRICATION
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRONS
INFORMATION
LASERS
LAYERS
LIFETIME
MOLECULAR BEAMS
NUCLEONS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
PROTONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS