cw electro-optical characteristics of graded-index waveguide separate-confinement heterostructure lasers with proton-delineated stripe

Journal Article · Fri Apr 01 04:00:00 EST 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94024· OSTI ID:5506209

Tsang, W T; Hartman, R L

Shallow proton-bombarded stripe-geometry (5 ..mu..m wide, 380 ..mu..m long) lasers were fabricated from graded-index waveguide separate-confinement heterostructure (GRIN-SCH) laser wafers grown by molecular beam epitaxy (MBE). Low median cw threshold currents of approx.50 mA were obtained for this stripe-geometry gain-guided structure. Such threshold currents represent a reduction by 25% from those of similar geometry lasers fabricated under the same technologies from the lowest threshold regular double heterostructure (DH) lasers wafers grown by MBE or liquid phase epitaxy (LPE). Up to the maximum measured output power of 10 mW/mirror (cw) the linearity is good and the symmetry of the output powers from both mirrors of these GRIN-SCH (gain guided) lasers compares well to those lasers of the buried heterostructure type (index guided). The average intrawafer variation in the symmetry of the two end mirror outputs can be characterized by the average of the quantity <..cap alpha..>, which is the deviations from unity of the A/B power output ratio measured at 3 mW. For three LPE grown DH wafers <..cap alpha..> is about +- 20%, and varies from +- 5% to +- 8% for three MBE grown DH wafers. For three GRIN-SCH wafers, <..cap alpha..> between +- 3% and +- 0.8% was obtained. The standard deviations of the cw threshold current distributions for MBE grown lasers (sigmaapprox. =4 mA dc) are one-half that for LPE grown lasers. This documents the improved layer thickness and composition control achievable with the MBE growth procedure.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 5506209
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 42:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
CONFIGURATION
CONFINEMENT
CRYSTAL GROWTH
CURRENTS
DATA
DIMENSIONS
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
EPITAXY
EXPERIMENTAL DATA
GAIN
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
LENGTH
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SIZE
THRESHOLD CURRENT
WAVEGUIDES