High-temperature (55--70 /sup 0/C) device characteristics of cw (AlGa)As double-heterostructure proton-bombarded stripe lasers grown by molecular beam epitaxy

Journal Article · Wed Dec 31 23:00:00 EST 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92133· OSTI ID:7066994

Tsang, W T; Holbrook, W R; Fraley, P E

We present the results of the cw electro-optical characteristics of 5-..mu..m shallow proton-bombarded strip laser fabricated from molecular beam epitaxy (MBE)-grown double-heterostructure (DH) wafers that have Al/sub 0.08/Ga/sub 0.92/As active layers at elevated temperatures (55--70 /sup 0/C), and compare them with those obtained from similar lasers fabricated from liquid phase expitaxy (LPE)-grown DH wafers. It is shown that the MBE lasers maintain their excellent cw device characteristics even at elevated temperatures. The temperature dependence of the cw I/sub th/ of MBE lasers is significantly less than that of the LPE lasers. Furthermore, the cw I/sub th/'s of these MBE lasers are at least as good as good LPE lasers. Owing to the very uniform layer thicknesses generated by the MBE process, the resultant slice quality is highly uniform. This results in a significantly increased yield of good lasers per MBE wafer.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 7066994
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 38:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
BEAMS
COMPARATIVE EVALUATIONS
CRYSTAL GROWTH
DIMENSIONS
ELECTRO-OPTICAL EFFECTS
ELEMENTARY PARTICLES
EPITAXY
FABRICATION
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRONS
LASERS
MEDIUM TEMPERATURE
MOLECULAR BEAMS
NUCLEONS
PNICTIDES
PROTONS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
THICKNESS