Si-doped GaAs/AlGaAs TJS laser by MBE

Journal Article · Sat Mar 31 23:00:00 EST 1984 · J. Vac. Sci. Technol., B; (United States)

DOI:https://doi.org/10.1116/1.582798· OSTI ID:6824914

Mitsunaga, K; Fujiwara, K; Nunoshita, M; Nakayama, T

The effect of high temperature annealing on the properties of silicon-doped GaAs/AlGaAs double heterostructure (DH) grown by molecular beam expitaxy (MBE)= and its application to the fabrication of transverse junction stripe (TJS) lasers are reported. In spite of the amphoteric nature of Si, it was found that the high temperature annealing gave little influence on the electrical and optical quality of the n-type DH wafer. The TJS laser using Si-doped GaAs/AlGaAs wafer has been oscillated cw at room temperature and exhibited low threshold current of 30 mA and high quantum efficiency of 60%.

• Research Organization: Central Research Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661, Japan
• OSTI ID: 6824914
• Journal Information: J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 2:2; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
FABRICATION
GALLIUM
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
HETEROJUNCTIONS
JUNCTIONS
LASERS
METALS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
THRESHOLD CURRENT