Room-temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrate

Technical Report · Thu Nov 14 23:00:00 EST 1985

OSTI ID:5725294

Windhorn, T H; Metze, G M

Room-temperature operation was achieved for GaAs/AlGaAs heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate. These devices, which incorporate a large optical cavity structure grown by molecular beam epitaxy directly on a Si wafer, have exhibited threshold currents as low as 775 mA and power outputs as high as 27 m W/facet in pulsed operation.

• Research Organization: Massachusetts Inst. of Tech., Lexington (USA). Lincoln Lab.
• OSTI ID: 5725294
• Report Number(s): AD-A-164116/6/XAB; JA-5766
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
ELEMENTS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASER CAVITIES
LASERS
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
OPERATION
OPTICS
PNICTIDES
PULSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
SUBSTRATES