AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate

Journal Article · Wed Aug 15 00:00:00 EDT 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95273· OSTI ID:6875876

Windhorn, T H; Metze, G M; Tsaur, B; Fan, J C.C.

AlGaAs double-heterostructure diode lasers have been fabricated for the first time on a monolithic GaAs/Si substrate. The heterostructure was prepared by growth of a series of GaAs and AlGaAs layers on a Ge-coated Si wafer. For pulsed operation at 77 K the lowest threshold current was 260 mA, the highest power output was 1.8 mW per facet, and the highest differential quantum efficiency was 1.2%.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
• OSTI ID: 6875876
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 45:4
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
HETEROJUNCTIONS
POWER
QUANTUM EFFICIENCY
THRESHOLD CURRENT
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
GERMANIUM ARSENIDES
OPERATION
SILICON
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
ELEMENTS
GALLIUM COMPOUNDS
GERMANIUM COMPOUNDS
JUNCTIONS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
420300* - Engineering- Lasers- (-1989)