Room-temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrate

Journal Article · Thu Nov 14 23:00:00 EST 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96368· OSTI ID:6339585

Windhorn, T H; Metze, G M

Room-temperature operation has been achieved for GaAs/AlGaAs heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate. These devices, which incorporate a large optical cavity structure grown by molecular beam epitaxy directly on a Si wafer, have exhibited threshold currents as low as 775 mA and power outputs as high as 27 mW/facet in pulsed operation.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
• OSTI ID: 6339585
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:10; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
ELEMENTS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASER CAVITIES
LASERS
MEDIUM TEMPERATURE
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
OPERATION
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
SUBSTRATES
THRESHOLD CURRENT