Low-threshold PbEuSeTe double-heterostructure lasers grown by molecular beam epitaxy

Journal Article · Mon Jul 03 00:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.101743· OSTI ID:6089319

Feit, Z; Woods, R; Kostyk, D; Jalenak, W

Lattice-matched double-heterostructure (DH) PbEuSeTe lasers were grown by molecular beam epitaxy (MBE) on (100) oriented PbTe substrates. Grooved mesa structures with 17--25 ..mu..m wide stripes and 0.75 ..mu..m thick Pb/sub 1/minus//ital x//Eu/sub /ital x//Se/sub /ital y//Te/sub 1/minus//ital y// active layers with 0less than or equal to/ital x/less than or equal to0.031 were fabricated. DH diode lasers with a PbTe active layer reached a maximum cw operation temperature of 175 K which equals the highest operation temperature achieved so far by a side optical cavity (SOC) single quantum well (SQW) PbTe/PbEuSeTe laser. The threshold current density of 3.9 A/cm/sup 2/ measured for this laser at 15 K is, to our knowledge, the lowest ever published for lead salt lasers. Comparison of MBE-grown DH lasers which utilize the lattice-matched PbTe/PbEuSeTe system to those utilizing the nonlattice-matched PbSe/PbEuSe system shows higher operation temperatures and by far lower threshold currents for the lattice-matched system.

• Research Organization: Laser Photonics, Analytics Division, Bedford, Massachusetts 01730(US)
• OSTI ID: 6089319
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 55:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CHALCOGENIDES
CURRENT DENSITY
CURRENTS
DATA
ELECTRIC CURRENTS
EPITAXY
EUROPIUM COMPOUNDS
EUROPIUM SELENIDES
EUROPIUM TELLURIDES
EXPERIMENTAL DATA
FABRICATION
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
LEAD COMPOUNDS
LEAD SELENIDES
LEAD TELLURIDES
MEDIUM TEMPERATURE
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
OPERATION
PERFORMANCE
RARE EARTH COMPOUNDS
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
TELLURIDES
TELLURIUM COMPOUNDS
THRESHOLD CURRENT