Diode lasers of lead-europium-selenide-telluride grown by molecular beam epitaxy
It is desirable to extend the wavelength coverage of PbSnTe diode lasers to shorter wavelengths (lambda<5 ..mu..m) and higher operating temperatures. Currently, this range is covered by PbS/sub x/Se/sub 1-x/ diode lasers operating below 100 K. Double heterojunction diode lasers have now been fabricated using a new materials system, Pb/sub 1-x/Eu/sub x/Se/sub y/Te/sub 1-y/. These structures were grown lattice matched to (100) oriented PbTe substrates by molecular beam epitaxy using PbTe, Eu, Te, PbSe, Tl/sub 2/Te (p dopant), and Bi/sub 2/Te/sub 3/ (n dopant) source ovens. Mesa diodes were fabricated with 20-..mu..m-wide stripes using anodic oxide insulation. Diodes have so far been fabricated with up to x = 0.010, y = 0.011, which operated cw from 4.93 ..mu..m (at 30 K) to 4.06 ..mu..m (at 136 K). Diodes with x = 0.0015, y = 0.0020 have operated up to 147 K cw. This is the highest cw operating temperature ever attained with lead-chalcogenide diode lasers. A wide range of single mode operation with approx.1 mW output power was observed for some of the better diodes. These diodes are useful for ultrahigh resolution spectroscopy, and may be useful in the future for low-loss, long-wavelength fiber optics communications.
- Research Organization:
- Physics Department, General Motors Research Laboratories, Warren, Michigan 48090-9055
- OSTI ID:
- 5679991
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 43:11; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Low-threshold PbEuSeTe double-heterostructure lasers grown by molecular beam epitaxy
On the performance of selenium rich lead-salt heterostructure lasers with remote p-n junction
Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
CRYSTAL DOPING
DATA
DISTRIBUTION
ENERGY
EPITAXY
EUROPIUM COMPOUNDS
EXPERIMENTAL DATA
FABRICATION
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
LEAD COMPOUNDS
LOW TEMPERATURE
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
OPERATION
POWER
RARE EARTH COMPOUNDS
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
TELLURIUM COMPOUNDS
TEMPERATURE DEPENDENCE
THRESHOLD ENERGY