New current injection 1. 5-. mu. m wavelength Ga/sub x/Al/sub y/In/sub 1-x/-yAs/InP double-heterostructure laser grown by molecular beam epitaxy

Journal Article · Wed Jun 01 04:00:00 EDT 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93801· OSTI ID:6224168

Tsang, W T; Olsson, N A

We have prepared and characterized for the first time a new current injection double-heterostructure (DH) laser with Ga/sub x/Al/sub y/In/sub 1-x/-y As as the active layer and InP as the cladding layers operating at 1.5-..mu..m wavelength. In this new heterostructure, there is only one group V element involved in every layer. This eases the precise control of lattice matching during molecular beam epitaxial (MBE) growth. At the same time, it eliminates the use of Al/sub 0.48/In/sub 0.52/ As, which is of lower quality than InP when grown by MBE, as the cladding layers. Broad-area Fabry--Perot diodes of 380 x 200 ..mu..m have a threshold current density of approx.3.2 kA/cm/sup 2/ for active layer thickness of 0.25 ..mu..m. In the temperature range approx.15--50 /sup 0/C, the threshold temperature dependence coefficient T/sub 0/ is typically approx.40 K. Above approx.50 /sup 0/C, T/sub 0/ decreases to approx.25--35 K. The present laser also represents the first current injection DH laser emitting at 1.5 ..mu..m ever prepared by MBE. In the present experiment, As/sub 2/ instead of As/sub 4/ was also used for the first time in growing the Ga/sub x/Al/sub y/In/sub 1-x/-y As layers by MBE in order to improve their quality. This becomes particularly important as the substrate growth temperatures employed are relatively low, < or approx. =625 /sup 0/C.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6224168
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 42:11; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CRYSTAL GROWTH
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CURRENT DENSITY
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
EPITAXY
EXPERIMENTAL DATA
FABRY-PEROT INTERFEROMETER
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
INTERFEROMETERS
JUNCTIONS
LASERS
MEASURING INSTRUMENTS
MOLECULAR BEAMS
NUMERICAL DATA
OPTICAL PROPERTIES
ORIENTATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
THRESHOLD CURRENT