Optically pumped 1. 55-. mu. m double heterostructure Ga/sub x/Al/sub y/In/sub 1-x/-yAs/Al/sub u/In/sub 1-u/As lasers grown by molecular beam epitaxy

Journal Article · Tue Feb 01 04:00:00 EST 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93906· OSTI ID:6535165

Alavi, K; Temkin, H; Wagner, W R; Cho, A Y

We report the first successful realization of room-temperature laser action at a wavelength of 1.55 ..mu..m in a new double heterostructure in which the active layer of Ga/sub x/Al/sub y/In/sub 1-x/-yAs is confined between two cladding layers of Al/sub u/In/sub 1-u/As. The structure was grown on InP by molecular beam epitaxy, and was pumped optically by a Q-switched yttrium aluminum garnet laser. Peak output power of up to 5 W was obtained at an incident power corresponding to four times that required for threshold without catastrophic degradation. Temperature dependence of the threshold power can be characterized by P/sub th/approx.exp(T/T/sub 0/) with T/sub 0/ = 60 /sup 0/C for 20 /sup 0/C< or =T< or =100 /sup 0/C.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6535165
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 42:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHALCOGENIDES
CRYSTAL GROWTH
ELECTROMAGNETIC RADIATION
EPITAXY
EQUATIONS
FERRITE GARNETS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFRARED RADIATION
JUNCTIONS
LASERS
MEDIUM TEMPERATURE
MINERALS
MOLECULAR BEAMS
OPTICAL PUMPING
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
POWER
PUMPING
Q-SWITCHING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SILICATE MINERALS
TEMPERATURE DEPENDENCE
TRANSITION ELEMENT COMPOUNDS
YTTRIUM COMPOUNDS