Low-threshold 1. 55-. mu. m InGaAsP/InP buried heterostructure distributed feedback lasers

Journal Article · Mon Jul 27 00:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98471· OSTI ID:6364104

Chinen, K; Gen-ei, K; Suhara, H; Tanaka, A; Matsuyama, T; Konno, K; Muto, Y

An extremely low-threshold current of 6 mA in cw mode at 22 /sup 0/C was achieved in 1.55-..mu..m InGaAsP/InP buried heterostructure distributed feedback lasers with a first-order grating and a normal cavity length of 300 ..mu..m. These lasers exhibited an average differential efficiency of 30% total at 4 mW without any coating on the facets, and a T/sub 0/ (25--70 /sup 0/C) value of 55 K. A spectral linewidth as low as 8 MHz at cw mode was obtained. The lasers showed high-speed pulse modulation response to 2.4 Gb/s (NRZ).

• Research Organization: Toshiba Electron Device Engineering Laboratory, Shinsugita, Isogo-ku, Yokohama 235, Japan
• OSTI ID: 6364104
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
EXPERIMENTAL DATA
INFORMATION
LASERS
LINE WIDTHS
MODULATION
NUMERICAL DATA
OPERATION
PERFORMANCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THRESHOLD CURRENT