Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers

Journal Article · Fri Aug 01 04:00:00 EDT 1980 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.328396· OSTI ID:5250196

Hirao, M; Doi, A; Tsuji, S; Nakamura, M; Aiki, K

InGaAsP/InP buried-heterostructure lasers with a stripe width of 1--2 ..mu..m have been fabricated by two-step liquid phase epitaxy and preferential chemical etching. They operate in the fundamental transverse mode at wavelengths of approx.1.3 ..mu..m with threshold current as low as 22 mA. The temperature limit for cw operation is 80 /sup 0/C.

• Research Organization: Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
• OSTI ID: 5250196
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:8; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
DATA
EPITAXY
ETCHING
FABRICATION
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
LIQUIDS
MEDIUM TEMPERATURE
OSCILLATION MODES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE FINISHING
WAVELENGTHS