InGaAsP/InP buried-heterostructure lasers with concurrent fabrication of the stripes and mirrors

Journal Article · Mon Oct 03 04:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99995· OSTI ID:6928795

Yap, D; Walpole, J N; Liau, Z L

Concurrent fabrication of InGaAsP/InP buried-heterostructure laser stripes and mirrors has been demonstrated by the use of dry etching and mass transport. In comparison to previous processes in which the laser stripes and mirrors are fabricated separately, this process offers the advantages of simplicity, built-in alignment, and improved control of device dimensions. Lasers with a cylindrical and a flat end mirror have threshold currents as low as 22 mA and differential quantum efficiencies as high as 24% per facet. Beam divergences as narrow as 13/sup 0/ are obtained for the cylindrical mirrors.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
• OSTI ID: 6928795
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:14; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALIGNMENT
ARSENIC COMPOUNDS
ARSENIDES
BEAM OPTICS
DESIGN
EFFICIENCY
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER MIRRORS
LASERS
MIRRORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE FINISHING