InGaAsP/InP buried-heterostructure lasers with concurrent fabrication of the stripes and mirrors

Technical Report · Mon Oct 03 04:00:00 EDT 1988

OSTI ID:6158885

Yap, D; Walpole, J N; Liau, Z L

Concurrent fabrication of InGaAsP/InP buried-heterostructure laser stripes and mirrors has been demonstrated by the use of dry etching and mass transport. In comparison to previous processes in which the laser stripes and mirrors are fabricated separately, this process offers the advantages of simplicity, built-in alignment, and improved control of device dimensions. Lasers with a cylindrical and a flat end mirror have threshold currents as low as 22 mA and differential quantum efficiencies as high as 24% per facet. Beam divergences as narrow as 13 are obtained for the cylindrical mirrors.

• Research Organization: Massachusetts Inst. of Tech., Lexington (USA). Lincoln Lab.
• OSTI ID: 6158885
• Report Number(s): AD-A-202345/5/XAB; JA-6131
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ALIGNMENT
ARSENIC COMPOUNDS
ARSENIDES
CONTROL
EFFICIENCY
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
MASS TRANSFER
MIRRORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE FINISHING