Novel scalloped-mirror diffraction-coupled InGaAsP/InP buried-heterostructure laser arrays

Journal Article · Sun Feb 19 23:00:00 EST 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100864· OSTI ID:6547108

Yap, D; Walpole, J N; Liau, Z L

Diffraction-coupled arrays of InGaAsP/InP buried-heterostructure lasers are reported. These arrays, fabricated by ion beam assisted etching and mass transport, have a novel scalloped mirror at the end of the coupling section that greatly increases the coupling between stripes and reduces the feedback into the same stripe. Far-field patterns show sharply defined lobes that are as narrow as 3/sup 0/. An output section with cylindrical mirrors has been incorporated into the arrays to increase the power in the central far-field lobe. Threshold currents as low as 150 mA have been obtained for eight-stripe arrays.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
• OSTI ID: 6547108
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
COUPLING
CURRENTS
DATA
DESIGN
DIFFRACTION
ELECTRIC CURRENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASER MIRRORS
LASERS
MIRRORS
NUMERICAL DATA
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT