High-performance InGaAsP/InP buried-heterostructure lasers and arrays defined by ion-beam-assisted etching

Technical Report · Mon May 02 00:00:00 EDT 1988

OSTI ID:7085600

Yap, D; Liau, Z L; Tsang, D Z; Walpole, J N

Ion-beam assisted etching was used to fabricate mass-transported InGaAsP/InP buried-heterostructure lasers. These lasers have a novel, deeply etched rectangular mesa that results in reduced current leakage. Both single-stripe lasers and Y-junction-coupled multiple-stripe laser arrays were demonstrated. The single-stripe lasers have 12-mA c-w threshold currents, differential quantum efficiencies of 32%-34% per facet, and smooth single-lobe far-field patterns. The multiple-stripe arrays lase in-phase with strong phase coherence.

• Research Organization: Massachusetts Inst. of Tech., Lexington (USA). Lincoln Lab.
• OSTI ID: 7085600
• Report Number(s): AD-A-194640/9/XAB; JA-6079
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHEMICAL REACTIONS
CURRENTS
EFFICIENCY
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION BEAMS
JUNCTIONS
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
REDUCTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE FINISHING