High-performance InGaAsP/InP buried-heterostructure lasers and arrays defined by ion-beam-assisted etching

Journal Article · Mon May 02 04:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99099· OSTI ID:5276284

Yap, D; Liau, Z L; Tsang, D Z; Walpole, J N

Ion-beam-assisted etching has been used to fabricate mass-transported InGaAsP/InP buried- heterostructure lasers. These lasers have a novel, deeply etched rectangular mesa that results in reduced current leakage. Both single-stripe lasers and Y-junction-coupled multiple-stripe laser arrays have been demonstrated. The single-stripe lasers have 12 mA cw threshold currents, differential quantum efficiencies of 32%--34% per facet, and smooth single-lobe far-field patterns. The multiple-stripe arrays lase in-phase with strong phase coherence.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
• OSTI ID: 5276284
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:18; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
COLLISIONS
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
ETCHING
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
ION BEAMS
ION COLLISIONS
JUNCTIONS
LASERS
LEAKAGE CURRENT
NUMERICAL DATA
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE FINISHING
THRESHOLD CURRENT