Semi-insulator-embedded InGaAsP/InP flat-surface buried heterostructure laser
Journal Article
·
· Appl. Phys. Lett.; (United States)
A new structure semi-insulator-embedded flat-surface buried heterostructure 1.3 ..mu..m InGaAsP/InP laser has been developed using chloride vapor phase epitaxy. cw threshold currents as low as 18 mA and high-temperature cw operation up to 100 /sup 0/C have been obtained. Small-signal response above 4 GHz has been achieved and no remarkable roll-off has been observed, which is due to small parasitic capacitance.
- Research Organization:
- Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, 243-01, Japan
- OSTI ID:
- 6211852
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:11; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Semi-insulator-embedded InGaAsP/InP flat-surface buried heterostructure laser
Planar-embedded InGaAsP/InP heterostructure laser with a semi-insulating InP current-blocking layer grown by metalorganic chemical vapor deposition
InGaAsP/InP planar buried heterostructure lasers with semi-insulating InP current blocking layers grown by MOCVD
Journal Article
·
Sat Nov 30 23:00:00 EST 1985
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6484211
Planar-embedded InGaAsP/InP heterostructure laser with a semi-insulating InP current-blocking layer grown by metalorganic chemical vapor deposition
Journal Article
·
Mon Oct 05 00:00:00 EDT 1987
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6032567
InGaAsP/InP planar buried heterostructure lasers with semi-insulating InP current blocking layers grown by MOCVD
Journal Article
·
Mon Jun 01 00:00:00 EDT 1987
· IEEE J. Quant. Electron.; (United States)
·
OSTI ID:6361911
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AGING
ARSENIC COMPOUNDS
ARSENIDES
CAPACITANCE
CHLORINE
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
FREQUENCY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GHZ RANGE
HALOGENS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASERS
LIFETIME
NONMETALS
NUMERICAL DATA
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
VAPOR PHASE EPITAXY
420300* -- Engineering-- Lasers-- (-1989)
AGING
ARSENIC COMPOUNDS
ARSENIDES
CAPACITANCE
CHLORINE
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
FREQUENCY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GHZ RANGE
HALOGENS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASERS
LIFETIME
NONMETALS
NUMERICAL DATA
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
VAPOR PHASE EPITAXY