Planar-embedded InGaAsP/InP heterostructure laser with a semi-insulating InP current-blocking layer grown by metalorganic chemical vapor deposition

Journal Article · Mon Oct 05 04:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98789· OSTI ID:6032567

Sanada, T; Nakai, K; Wakao, K; Kuno, M; Yamakoshi, S

We used metalorganic chemical vapor deposition to fabricate a planar-embedded InGaAsP/InP heterostructure laser with a semi-insulating InP current-blocking layer. The laser exhibits cw operation with a low, 20 mA threshold current and a high external differential quantum efficiency of 40% at room temperature. Measurements have also shown a small-signal frequency response of 10 GHz due to an extremely small parasitic capacitance of 3.5 pF.

• Research Organization: Fujitsu Laboratories, Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
• OSTI ID: 6032567
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:14; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENTS
DATA
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
ENERGY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD CURRENT
THRESHOLD ENERGY