High-efficiency InGaAsP/InP flat-surface buried heterostructure distributed feedback lasers at 1. 55. mu. m

Journal Article · Tue Sep 01 04:00:00 EDT 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.339516· OSTI ID:6155128

Wakao, K; Kihara, K; Kotaki, Y; Kusunoki, T; Sudo, H; Isozumi, S; Yamakoshi, S; Ishikawa, H; Imai, H

A new buried heterostructure has been developed. High-efficiency (29%), high-power (37-mW) operation has been achieved with InGaAsP/InP distributed feedback lasers emitting at 1.55 ..mu..m by using the novel buried heterostructure.

• Research Organization: Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-01, Japan
• OSTI ID: 6155128
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 62:5; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
DATA
EFFICIENCY
ELECTROMAGNETIC RADIATION
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
JUNCTIONS
LASERS
NUMERICAL DATA
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS