1. 55-. mu. m InGaAsP distributed feedback vapor phase transported buried heterostructure lasers

Journal Article · Mon Jul 01 04:00:00 EDT 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96410· OSTI ID:5784059

Koch, T L; Bridges, T J; Burkhardt, E G; Corvini, P J; Coldren, L A; Linke, R A; Tsang, W T; Logan, R A; Johnson, L F; Kazarinov, R F; Yen, R; Wilt, D P

1.55-..mu..m single longitudinal mode InGaAsP distributed feedback (DFB) lasers have been fabricated using a vapor phase transported (VPT) buried heterostructure geometry on a liquid phase epitaxially grown broad area DFB base. Lasing thresholds in the 35--65-mA range were obtained, with side mode suppression ratios as high as 39 dB under modulation. The VPT DFB laser has both a good high-speed modulation capability and low wavelength chirping under high-speed modulation, making it an attractive candidate for high bit rate, long-haul optical fiber systems applications, with demonstrated record system performance at both 2 and 4 Gbit/s.

• Research Organization: ATandT Bell Laboratories, Holmdel, New Jersey 07733
• OSTI ID: 5784059
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CURRENTS
DATA
ELECTRIC CURRENTS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
FIBERS
FREQUENCY MODULATION
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
LIQUID PHASE EPITAXY
MODULATION
NUMERICAL DATA
OPTICAL FIBERS
PERFORMANCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT