Dynamic and CW linewidth measurements of buried heterostructure distributed feedback lasers

Journal Article · Tue Aug 01 00:00:00 EDT 1989 · IEEE Photonics Technology Letters; (USA)

DOI:https://doi.org/10.1109/68.36046· OSTI ID:5522983

Wang, S J; Dutta, N K ^[1]; Gnauek, A H ^[2]

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1. AT and T Bell Labs., Murray Hill, NJ (USA)
2. AT and T Bell Labs., Crawford Hill, NJ (US)

In this work measurements of frequency chirp as a function of modulation current, data rate, and bias level for the etched-mesa buried heterostructure distributed feedback (EMBH-DFB) laser are presented. The results show that the chirp increases with increasing modulation current and is significantly larger if the laser off-state is below threshold than if it is above threshold. The 20 dB down chirp widths are in the range of 4 to 6 A for 40 mA of modulation current at 5 Gbits/s under above threshold bias. Using the EMBH-DFB laser, a system experiment over 22 km fiber at 16 Gbits/s has been carried out which shows less than 0.5 dB dispersion power penalty. The CW linewidths of the asymmetric facet coated DFB lasers are in the range of 10 to 40 Mhz at 6 mW of output power. This wide range arises principally from a variation of the phase of the grating at the high-reflectivity coated facet.

• OSTI ID: 5522983
• Journal Information: IEEE Photonics Technology Letters; (USA), Journal Name: IEEE Photonics Technology Letters; (USA) Vol. 1:8; ISSN IPTLE; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
COATINGS
CURRENT DENSITY
FEEDBACK
FREQUENCY MODULATION
HETEROJUNCTIONS
JUNCTIONS
LASERS
LINE WIDTHS
MEASURING METHODS
MODULATION
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE PROPERTIES