InGaAs/InP distributed feedback quantum well laser

Journal Article · Mon Sep 24 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103463· OSTI ID:6432077

Temkin, H; Tanbun-Ek, T; Logan, R A; Olsson, N A; Sergent, M A; Wecht, K W; Cebula, D A ^[1]

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1. AT T Bell Laboratories, Murray Hill, NJ (USA)

We describe InGaAs/InP multiquantum well distributed feedback (DFB) lasers with novel properties atrributable to the quantum well based active layer. The low internal loss waveguide and shallow gratings have allowed the fabrication of lasers with a cavity length varying from 0.5 to 2 mm, and corresponding threshold currents of 22 and 100 mA, respectively. A mode rejection ratio as high as 50 dB has been obtained in lasers with one antireflection-coated facet. The long cavity devices exhibit linewidths as low as 600 kHz at a power output of 35 mW. Transmission experiments through 70 km of fiber, at 1.7 Gb/s, showed a dynamic chirp penalty of only 0.25 dB, a factor of 8--10 smaller than in conventional lasers.

• OSTI ID: 6432077
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:13; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ANTIREFLECTION COATINGS
COATINGS
CONTROL
CURRENTS
DESIGN
ELECTRIC CURRENTS
FREQUENCY CONTROL
GRATINGS
LASER CAVITIES
LASER MATERIALS
LASERS
LINE WIDTHS
MATERIALS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT
TUNING
WAVEGUIDES