Dynamic and CW linewidth measurements of 1. 55-. mu. m InGaAs-InGaAsP multiquantum well distributed feedback lasers

Journal Article · Wed Oct 31 23:00:00 EST 1990 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/68.63217· OSTI ID:5937446

Wang, S J; Ketelsen, L J.P.; McCrary, V R; Twu, Y; Napholtz, S G; Werner, W V ^[1]

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1. AT and T Bell Lab., Murray Hill, NJ (US)

Measurements of the CW linewidth, and frequency chirp as a function of modulation data rate and bias level for the 1.55-{mu}m InGaAsP multiquantum well distributed feedback lasers grown by low-pressure MOCVD are presented. The results show that the CW linewidth of the asymmetric facet coated multiquantum well DFB lasers can be as low as 2.0 MHz at 13.5 mW output power. The frequency chirp increases with modulation data rate and is significantly larger if the laser off-state is below threshold than if it is above threshold. The 20 dB down chirp widths are in the range of 1.9--5 {Angstrom} for 40 mA peak to peak modulation current at 10 Gb/s under above threshold bias.

• OSTI ID: 5937446
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 2:11; ISSN IPTLE; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELECTROMAGNETIC RADIATION
ENERGY
FEEDBACK
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFRARED RADIATION
JUNCTIONS
LASERS
LINE WIDTHS
MODULATION
NEAR INFRARED RADIATION
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE COATING
THRESHOLD ENERGY